The $HgI_2$ single crystal which can be used for the ${gamma}-ray$ detector at room temperature was grown by Temperature Oscillation Method. The low temperature photoluminescence, specific resistivity and trap concentration of $HgI_2$ single crystal were investigated. Three main luminescence bands were observed at 2.30eV, 2.20eV and 2.00eV at 20K, related to the excitons, I-vacancies and impurities, respectively. The specific resistivity and trap concentration of $HgI_2$ single crystal were $10^{11}{Omega};cm;and;1.8{times}10^{14}/cm^3$ at room temperature, respectively. Also the radiation detecting system was deviced by $HgI_2$${gamma}-ray$ detector, one chip microprocessor, LCD module and personal computer. The prepared $HgI_2$${gamma}-ray$ detector showed a good linearity of ${gamma}-radiation$ dose for standard ${gamma}-ray$.
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